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2SC5584

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NPN Transistor


Description
isc Silicon NPN Power Transistor isc Product Specification 2SC5584 DESCRIPTION ·Silicon NPN triple diffusion mesa type ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXI...



INCHANGE

2SC5584

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