isc Silicon PNP Power Transistors
INCHANGE Semiconductor
BD367
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Excellent Safe Operating Area ·Complement to Type BD366 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for linear amplifiers, series pass ...
