DatasheetsPDF.com

IRF1010N

Part Number	IRF1010N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistanc...
Datasheet	IRF1010N PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 85 IDM Drain Current-Single Pulsed 290 PD Total Dissipation @TC=25℃ 180 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL...

Similar Datasheet

IRF101 N-Channel Power MOSFET - Fairchild Semiconductor
IRF1010 N-Channel Power MOSFET - nELL
IRF1010E Power MOSFET - International Rectifier
IRF1010E N-Channel MOSFET - INCHANGE
IRF1010EL Power MOSFET - International Rectifier
IRF1010ELPbF HEXFET Power MOSFET - International Rectifier
IRF1010EPBF Power MOSFET - International Rectifier
IRF1010ES Power MOSFET - International Rectifier
IRF1010ES N-Channel MOSFET - INCHANGE
IRF1010ESPbF HEXFET Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)