DatasheetsPDF.com

IPP65R660CFD

INCHANGE
Part Number IPP65R660CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.66Ω...
Datasheet PDF File IPP65R660CFD PDF File

IPP65R660CFD
IPP65R660CFD

Overview
isc N-Channel MOSFET Transistor IPP65R660CFD，IIPP65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
66Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 17 PD Total Dissipation @TC=25℃ 62.
5 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)