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IRF5210

Part Number	IRF5210
Manufacturer	INCHANGE
Description	P-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: ...
Datasheet	IRF5210 PDF File

Overview

isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.
06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -40 IDM Drain Current-Single Pulsed -140 PD Total Dissipation @TC=25℃ 200 Tj Max.
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