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IRFB4227

INCHANGE
Part Number IRFB4227
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFB4227,IIRFB4227 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhanc...
Datasheet PDF File IRFB4227 PDF File

IRFB4227
IRFB4227


Overview
isc N-Channel MOSFET Transistor IRFB4227,IIRFB4227 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤24mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 65 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 330 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -40~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
45 62 UNIT ℃/W ℃/W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB4227,IIRFB4227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA MIN TYP MAX UNIT 200 V 3 5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=46A 24 mΩ IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V VSD Diode forward voltage Is=46A; VGS = 0V ±0.
1 μA 20 μA 1.
3 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to ...



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