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8N80

INCHANGE
Part Number 8N80
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 15, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) =...
Datasheet PDF File 8N80 PDF File

8N80
8N80


Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 1.
25Ω(Max) @ ID= 4A ·Drain Current –ID=8.
0A@ TC=25℃ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay driver .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ICM Collector Current-Peak 32 A Ptot Total Dissipation...



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