N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching regulators, converters, solenoid and r...
Similar Datasheet