N-Channel MOSFET
Description
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·SOA is Power-Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Desi...
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