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FCP190N60

Part Number	FCP190N60
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 24, 2020
Detailed Description	isc N-Channel MOSFET Transistor FCP190N60 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resis...
Datasheet	FCP190N60 PDF File

Overview

isc N-Channel MOSFET Transistor FCP190N60 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.
2 A IDM Drain Current-Single Pulsed 60.
6 A PD Total Dissipation 208 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYM...

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