DatasheetsPDF.com

2SC4574

TO-220F NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switchi...

INCHANGE

Download 2SC4574 Datasheet

Similar Datasheet

2SC4500 NPN TRANSISTOR - Hitachi Semiconductor
2SC4500 Silicon NPN Transistor - Renesas
2SC4500L NPN TRANSISTOR - Hitachi Semiconductor
2SC4500L Silicon NPN Transistor - Renesas
2SC4500S NPN TRANSISTOR - Hitachi Semiconductor
2SC4500S Silicon NPN Transistor - Renesas
2SC4501 Silicon NPN Transistor - Hitachi Semiconductor
2SC4501 Silicon NPN Transistor - Renesas
2SC4501L Silicon NPN Transistor - Hitachi Semiconductor
2SC4501L Silicon NPN Transistor - Renesas

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)