Silicon N-Channel IGBT
Description
GT30J311
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J311
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
Third-generation IGBT
Enhancement mode type
High speed
: tf = 0.30μs (Max.)
Low saturation voltage : VCE (sat) = 2.7V (Max.)
FRD included between emitter and collector
MAXIMUM RATINGS (Ta = 25°C)
C...
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