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FDS4435BZ

ON Semiconductor
Part Number FDS4435BZ
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Feb 19, 2021
Detailed Description FDS4435BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW Description This P−Channel MOSFET is produced using ON...
Datasheet PDF File FDS4435BZ PDF File

FDS4435BZ
FDS4435BZ

Overview
FDS4435BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -8.
8 A, 20 mW Description This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features • Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.
8 A • Max RDS(on) = 35 mW at VGS = −4.
5 V, ID = −6.
7 A • Extended VGSS Range (−25 V) for Battery Applications • HBM ESD Protection Level of ±3.
8 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capabilit...


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