Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-120V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base Voltage
150
V
VCEO
C...
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