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TTD1415B

Toshiba

Silicon NPN Transistor


Description
Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications High-Power Switching Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circui...



Toshiba

TTD1415B

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