N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
IPB120N10S4-05
FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power swit...
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