P-Channel MOSFET Transistor
Description
isc P-Channel MOSFET Transistor
NVD5117PL
FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage
: VDSS= -60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 16mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
and solenoid...
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