N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
2SK3608S
FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·motor drive, DC-DC converter, power switch
an...
Inchange Semiconductor
2SK3608S PDF File
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