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BAT42W

General Semiconductor
Part Number BAT42W
Manufacturer General Semiconductor
Description Schottky Diodes
Published Mar 26, 2005
Detailed Description BAT42W, BAT43W Schottky Diodes FEATURES SOD-123 .022 (0.55) ♦ For general purpose applications ♦ These diodes feature v...
Datasheet PDF File BAT42W PDF File

BAT42W
BAT42W

Overview
BAT42W, BAT43W Schottky Diodes FEATURES SOD-123 .
022 (0.
55) ♦ For general purpose applications ♦ These diodes feature very low turnon voltage and fast switching.
These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
case with the type designations BAT42 to BAT43 and in the MiniMELF case with type designations LL42 to LL43.
Cathode Mark .
152 (3.
85) .
140 (3.
55) .
112 (2.
85) .
100 (2.
55) Top View ♦ These diodes are also available in the DO-35 max.
.
004 (0.
1) max.
.
053 (1.
35) max.
.
006 (0.
15) min.
.
010 (0.
25) .
067 (1.
70) .
055 (1.
40) MECHANICAL DATA Dimensions in inches and (millimeters) Case: SOD-123 Plastic Case Weight: approx.
0.
01 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, δ < 0.
5, Tamb = 25 °C Surge Forward Current at t p < 10 ms, Tamb = 25 °C Power Dissipation1) at Tamb = 65 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 2) Value 30 200 500 4 2) 200 2) 125 –55 to +125 –55 to +150 Unit V mA mA A mW °C °C °C V RRM IF IFRM IFSM Ptot Tj Tamb TS Valid provided that electrodes are kept at ambient temperature 4/98 BAT42W, BAT43W ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 200 mA at IF = 10 mA at IF = 50 mA at IF = 2 mA at IF = 15mA Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V at VR = 25 V, Tj = 100 °C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω Detection Efficiency at RL = 15 KΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V Thermal Resistance Junction to Ambient Air 2) Min.
30 Typ.
– Max.
– Unit V V(BR)R BAT42W BAT42W BAT43W ...


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