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2SK1359

Toshiba Semiconductor
Part Number 2SK1359
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSII.5) 2SK1359 DC−DC Converter and Motor Drive ...
Datasheet PDF File 2SK1359 PDF File

2SK1359
2SK1359

Overview
2SK1359 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSII.
5) 2SK1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.
0 Ω (typ.
) High forward transfer admittance : |Yfs| = 2.
0 S (typ.
) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 k ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 ...


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