DatasheetsPDF.com

2SK2009

Toshiba Semiconductor
Part Number 2SK2009
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Appli...
Datasheet PDF File 2SK2009 PDF File

2SK2009
2SK2009

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance.
• Low gate threshold voltage: Vth = 0.
5 to 1.
5 V • Excellent switching times: ton = 0.
06 μs (typ.
) toff = 0.
12 μs (typ.
) • Low drain-source ON resistance: RDS (ON) = 1.
2 Ω (typ.
) • Small package • Enhancement-mode Marking Equivalent Circuit 2SK2009 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDS VGSS ID PD Tch Tstg 30 V ±20 V 200 mA 200 mW 150 °C −55 to 150 °...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)