DatasheetsPDF.com

2SK2013

Toshiba Semiconductor
Part Number 2SK2013
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application...
Datasheet PDF File 2SK2013 PDF File

2SK2013
2SK2013

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.
7 S (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 2) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 1 25 150 −55 to 150 V V A W °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)