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2SK3159

Hitachi Semiconductor

Silicon N-Channel MOSFET


Description
2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance R DS = 23 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3159 Absolute Maximum Ratings (Ta = 2...



Hitachi Semiconductor

2SK3159

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