N-Channel MOSFET
Description
2SK3233
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features
Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = ...
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