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2SK3298

NEC
Part Number 2SK3298
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK32...
Datasheet PDF File 2SK3298 PDF File

2SK3298
2SK3298


Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3298 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION PART NUMBER 2SK3298 PACKAGE Isolated TO-220 FEATURES •Low gate charge QG = 34 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 7.
5 A) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.
75 Ω MAX.
(VGS = 10 V, ID = 4.
0 A) •Avalanche capability ratings •Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±7.
5 ±30 2.
0 40 150 −55 to +150 7.
5 37.
5 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 IAS EAS Note2 Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14059EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 1999, 2000 2SK3298 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Dio...


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