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FDS3590

Fairchild Semiconductor
Part Number FDS3590
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been de...
Datasheet PDF File FDS3590 PDF File

FDS3590
FDS3590

Overview
FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 6.
5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS3590 FDS3590 13’’  2000 Fairchild Semiconductor Corporation 5 6 7 8 Ratings 80 ±20 6.
5 50 2.
5 1.
2 1.
0 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W Quantity 2500 units FDS3590 Rev C (W) FDS3590 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, ID = 6.
5 A IAR Maximum Drain-Source Avalanche Current Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ...


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