Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q
15.0±0.5
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat)
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Paramet...
