Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
Unit: mm
3.4±0.3
6.0±0.2
1.0±0.1
■ Features
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
High-speed switching
1.5–+00.4
High collector-base voltage (Emitter open) VCBO
Wide safe operation area Satisfactory linearity ...
