Silicon NPN Transistor
Description
Darlington
2SD1769
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.0max 100typ
typ
Equivalent circuit
B
C
(2.5k Ω)(200 Ω) E
Silicon NPN Triple Diffused Planar Transi...
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