Built-in Avalanche Diode for Surge Absorbing Darlington
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1796 60±10 60±10 6 4 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SD1796
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=50V VE...
