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Si2301BD

Vishay Siliconix
Part Number Si2301BD
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.100 @ VGS = - 4.5 V...
Datasheet PDF File Si2301BD PDF File

Si2301BD
Si2301BD

Overview
Si2301BDS Vishay Siliconix P-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.
100 @ VGS = - 4.
5 V 0.
150 @ VGS = - 2.
5 V ID (A)b - 2.
4 - 2.
0 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301BDS-T1 S 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec - 20 "8 - 2.
4 - 1.
9 - 10 - 0.
72 0.
9 0.
57 Steady State Uni...


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