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SI2301DS

Vishay Siliconix
Part Number SI2301DS
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 ...
Datasheet PDF File SI2301DS PDF File

SI2301DS
SI2301DS

Overview
Si2301DS Vishay Siliconix P-Channel 1.
25-W, 2.
5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.
130 @ VGS = - 4.
5 V 0.
190 @ VGS = - 2.
5 V ID (A) - 2.
3 - 1.
9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 "8 - 2.
3 - 1.
5 - 10 - 1.
6 1.
25 0.
8 - 55 to 150 Unit V A...


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