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SI2306DS

Part Number	SI2306DS
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W)...
Datasheet	SI2306DS PDF File

Overview

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.
5 2.
8 rDS(on) (W) 0.
057 @ VGS = 10 V 0.
094 @ VGS = 4.
5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit...

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