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IRF1010N

International Rectifier

Power MOSFET


Description
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combin...



International Rectifier

IRF1010N

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