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IRF1010NS

Part Number	IRF1010NS
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l F...
Datasheet	IRF1010NS PDF File

Overview

PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable ...

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