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IRF123

Intersil Corporation
Part Number IRF123
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs D...
Datasheet PDF File IRF123 PDF File

IRF123
IRF123

Overview
Semiconductor IRF120, IRF121, IRF122, IRF123 8.
0A and 9.
2A, 80V and 100V, 0.
27 and 0.
36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09594.
October 1997 Features • 8.
0A and 9.
2A, 80V and 100V • rDS(ON) = 0.
27Ω and 0.
36Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface M...


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