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IRF322

Intersil Corporation
Part Number IRF322
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Des...
Datasheet PDF File IRF322 PDF File

IRF322
IRF322

Overview
Semiconductor IRF320, IRF321, IRF322, IRF323 2.
8A and 3.
3A, 350V and 400V, 1.
8 and 2.
5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17404.
July 1998 Features • 2.
8A and 3.
3A, 350V and 400V • rDS(ON) = 1.
8Ω and 2.
5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF320 IRF321 IRF322 IRF323 G S NOTE: When ordering, use the entire part number.
Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge.
Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998 File Number 1569.
3 5-1 IRF320, IRF321, IRF322, IRF323 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF320 400 400 3.
3 2.
1 13 ±20 50 0.
4 190 -55 to 150 300 260 IRF321 350 350 3.
3 2.
1 13 ±20 50 0.
4 190 -55 to 150 300 260 IRF322 400 400 2.
8 1.
8 11 ±20 50 0.
4 190 -55 to 150 300 260 IRF323 350 350 2.
8 1.
8 11 ±20 50 0.
4 190 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1).
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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