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IRF430

Seme LAB
Part Number IRF430
Manufacturer Seme LAB
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0....
Datasheet PDF File IRF430 PDF File

IRF430
IRF430

Overview
IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.
01 (1.
575) Max.
N–CHANNEL POWER MOSFET 26.
67 (1.
050) Max.
4.
47 (0.
176) Rad.
2 Pls.
22.
23 (0.
875) Max.
11.
43 (0.
450) 6.
35 (0.
250) 1.
09 (0.
043) 0.
97 (0.
038) Dia.
30.
40 (1.
197) 29.
90 (1.
177) 12.
19 (0.
48) 11.
18 (0.
44) 1.
63 (0.
064) 1.
52 (0.
060) VDSS ID(cont) RDS(on) 500V 4.
5A 1.
5W 2 11.
18 (0.
440) 10.
67 (0.
420) 4.
09 (0.
161) 3.
84 (0.
151) 2 Pls 1 FEATURES 16.
97 (0.
668) 16.
87 (0.
664) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS Case – Drain TO–3 Metal Package Pin 1 – Gate Pin 2 – Source • SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS = 0 , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and...


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