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IRF520A

Fairchild Semiconductor
Part Number IRF520A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRF520A PDF File

IRF520A
IRF520A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
155 Ω (Typ.
) Ο IRF520A BVDSS = 100 V RDS(on) = 0.
2 Ω ID = 9.
2 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 100 9.
2 6.
5 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W/ C Ο 37 + _ 20 113 9.
2 4.
5 6.
5 45 0.
3 - 55 to +175 Ο C 300 Thermal Resistance Symbol R θ JC R θ CS R θ JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
3.
31 -62.
5 Ο Units C /W Rev.
B ©1999 Fairchild Semiconductor Corporation IRF520A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage TJBreakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 100 -2.
0 -----------------0.
12 ------6.
35 370 95 38 14 14 36 28 16 2.
7 7.
8 --4.
0 100 -100 10 100 0.
2 -...


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