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IRFD220

Part Number	IRFD220
Manufacturer	Fairchild Semiconductor
Description	N-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon g...
Datasheet	IRFD220 PDF File

Overview

IRFD220 Data Sheet January 2002 0.
8A, 200V, 0.
800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09600.
Features • 0.
8A, 200V • rDS(ON) = 0.
800Ω • Single Pulse ...

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