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RN1302

Toshiba Semiconductor
Part Number RN1302
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Swi...
Datasheet PDF File RN1302 PDF File

RN1302
RN1302


Overview
RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2301~RN2306 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1301~1306 RN1301~1306 RN1301~1304 RN1305, 1306 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 10 5 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
006g ― SC-70 2-2E1A Unit V V V mA mW °C °C 1 2001-06-07 RN1301~RN1306 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1301~1306 RN1301 RN1302 Emitter cut-off current RN1303 RN1304 RN1305 RN1306 RN1301 RN1302 DC current gain RN1303 RN1304 RN1305 RN1306 Collector-emitter saturation voltage RN1301~1306 RN1301 RN1302 Input voltage (ON) RN1303 RN1304 RN1305 RN1306 Input voltage (OFF) Translation frequency Collector output capacitance RN1301~1304 RN1305, 1306 RN1301~1306 RN1301~1306 RN1301 RN1302 Input resistor RN1303 RN1304 RN1305 RN1306 RN1301~1305 Resistor ratio RN1305 RN1306 R1/R2 R1 VI (OFF) fT Cob VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 5V, IC = 0.
1mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VCE = 0.
2V, IC = 5mA IC = 5mA, IB = 0.
25mA VCE = 5V, IC = 10mA VEB = 5V, IC = 0 VEB = 10V, IC = 0 Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min ― ― 0.
82 0.
38 0.
17 0.
082 0.
078 0.
074 30 50 70 80 80 80 ― 1.
1 1.
2 1.
3 1.
5 0.
6 0.
7 1.
0 0.
5 ― ― 3.
29 7 15.
4 32.
9 1.
54 3.
29 0.
9 Typ.
― ― ― ― ― ― ―...



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