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RN2226

Part Number	RN2226
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Apr 16, 2005
Detailed Description	RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2...
Datasheet	RN2226 PDF File

Overview

RN2221~RN2227 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2221,RN2222,RN2223 RN2224,RN2225,RN2226,RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = −800mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN1221~RN1227 Unit: mm Equivalent Circuit Bias Resistor Values Type No.
RN2221 RN2222 RN2223 RN2224 RN2225 RN2226 RN2227 R1 (kΩ) 1 2.
2 4.
7 10 0.
47 1 2.
2 R2 (kΩ) 1 2.
2 4.
7 10 10 10 10 JEDEC EIAJ TOSHIBA Weight: 0.
13g ― ― 2-4E1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2221~2227 RN2221~2224 Emitter-base voltage RN2225, 2226 RN2227 Collector current Collector power dissipation Junction temperature Storage temperature range RN2221~2227 IC PC Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −10 −5 −6 −800 300 150 −55~150 mA mW °C °C V Unit V V 1 2001-06-07 RN2221~RN2227 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN2221~2227 RN2221 RN2222 RN2223 Emitter cut-off current RN2224 RN2225 RN2226 RN2227 RN2221 RN2222 RN2223 DC current gain RN2224 RN2225 RN2226 RN2227 Collector-emitter saturation voltage RN2221 RN2222~2227 RN2221 RN2222 RN2223 Input voltage (ON) RN2224 RN2225 RN2226 RN2227 RN2221~2224 Input voltage (OFF) Translation frequency Collector output capacitance RN2225, 2226 RN2227 RN2221~2227 RN2221~2227 RN2221 RN2222 RN2223 Input resistor RN2224 RN2225 RN2226 RN2227 RN2221~2224 Resistor ratio RN2225 RN2226 RN2227 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = −5V, IC = −0.
1mA VCE = −5V, IC = −20mA VCB = −10V, IE = 0 f = 1MHz VCE = −0.
2V IC = −100mA IC = −50mA, IB = −2mA IC = −50mA, IB = −1mA VCE = −1V, IC = −100mA VEB = −5V, IC = 0 VEB = −6V, IC = 0 VEB = −10V, IE = 0 Test Condition...

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