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RFL1N10

Part Number	RFL1N10
Manufacturer	Intersil Corporation
Description	1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs
Published	Apr 16, 2005
Detailed Description	Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel en...
Datasheet	RFL1N10 PDF File

Overview

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.
200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power ﬁeld-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09282.
September 1998 Features • 1A, 80V and 100V • rDS(ON) = 1.
200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.
200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel...

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