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RFL1N18

Part Number	RFL1N18
Manufacturer	Intersil Corporation
Description	1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs
Published	Apr 16, 2005
Detailed Description	Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enh...
Datasheet	RFL1N18 PDF File

Overview

Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.
65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09289.
January 1998 Features • 1A, 180V and 200V • rDS(ON) = 3.
65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • ...

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