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Q62702-B0908

Siemens Semiconductor Group
Part Number Q62702-B0908
Manufacturer Siemens Semiconductor Group
Description Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance)
Published Apr 16, 2005
Detailed Description BB 664 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series ind...
Datasheet PDF File Q62702-B0908 PDF File

Q62702-B0908
Q62702-B0908

Overview
BB 664 Silicon Variable Capacitance Diode Preliminary data • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure 2 1 VES05991 Type BB 664 BB 664 Marking Ordering Code 4 4 Q62702- B0909 (unmatched) Q62702- B0908 (in-lined matched) Pin Configuration Package 1=C 2=A SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55.
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+125 -55.
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+150 mA °C Unit V VR VRM IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-10-1998 1998-11-01 BB 664 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current Symbol min.
Values typ.
max.
10 100 nA Unit IR IR - VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 39 29.
4 2.
5 2.
4 41.
8 31.
85 2.
7 2.
55 11.
8 16.
4 0.
6 0.
6 44.
5 34.
2 2.
85 2.
75 12.
5 17.
5 2 0.
75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 15.
2 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) % Ω nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance 1) In-line matching.
For details please refer to Application Note 047 Semiconductor Group Semiconductor Group 22 Jul-10-1998 1998-11-01 BB 664 Diode capacitance CT = f (V R) f = 1MHz 40 pF 5 CT 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 VR Semiconductor Group Semiconductor Group 33 Jul-10-1998 1998-11-01 ...


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