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UPA807T

NEC
Part Number UPA807T
Manufacturer NEC
Description NPN Transistor
Published Apr 17, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2...
Datasheet PDF File UPA807T PDF File

UPA807T
UPA807T

Overview
DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP.
@VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.
5 dB TYP.
@VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179) 2.
0±0.
2 PACKAGE DRAWINGS (Unit: mm) 2.
1±0.
1 1.
25±0.
1 1.
3 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.
65 2 µPA807T µPA807T-T1 0.
65 3 0.
9±0.
1 p...


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