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K4E170812D

Part Number	K4E170812D
Manufacturer	Samsung
Description	2M x 8Bit CMOS Dynamic RAM
Published	Apr 25, 2005
Detailed Description	K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION ...
Datasheet	K4E170812D PDF File

Overview

K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (2K Ref.
or 4K Ref.
), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 EDO Mode DR...

Similar Datasheet

K4E170811D 2M x 8Bit CMOS Dynamic RAM - Samsung
K4E170812D 2M x 8Bit CMOS Dynamic RAM - Samsung

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