NPN Epitaxial Silicon Transistor
Description
MJE200
MJE200
Feature
Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Col...
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