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NDS356P

Fairchild
Part Number NDS356P
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel l...
Datasheet PDF File NDS356P PDF File

NDS356P
NDS356P


Overview
March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -1.
1 A, -20V.
RDS(ON) = 0.
3Ω @ VGS = -4.
5V.
Proprietary pac...



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