Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 2.084 Ω (Typ.)
1
SFW/I9610
BVDSS = -200 V RDS(on) = 3.0 Ω ID = -1.75 A
D2-PAK
2
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Source
Absolu...
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